IRF630 is designed to sustain load voltage up to 200 V and 9 A current. This component is a great combination of low on-state resistance, cost-effective, and rugged design. IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. You can download the datasheet the link given below. Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D)ĮCN: X15-0364-Rev.
Soldering recommendations (peak temperature) d Operating junction and storage temperature range The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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